PART |
Description |
Maker |
AFT21H350W03SR6 |
RF Power LDMOS Transistors
|
NXP Semiconductors
|
LET9060C |
RF POWER TRANSISTORS Ldmos Enhanced Technology
|
意法半导 STMICROELECTRONICS[STMicroelectronics]
|
LET9130 |
RF POWER TRANSISTORS Ldmos Enhanced Technology
|
SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
MHW1810 |
LDMOS RF Power Transistors.(LDMOS射频功率 LDMOS射频功率晶体管。(LDMOS的射频功率管
|
Motorola Mobility Holdings, Inc.
|
RF--35 CRCW120610KOJNEA CRCW120610ROJNEA ATC100B0R |
RF Power LDMOS Transistors Enhancement--Mode Lateral MOSFETs
|
Freescale Semiconductor, Inc
|
LET21008 |
RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY IN PLASTIC PACKAGE
|
STMICROELECTRONICS[STMicroelectronics]
|
LET20030S |
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
|
STMICROELECTRONICS[STMicroelectronics]
|
UT--141C--25 CRCW120610R0JNEA MCGPR63V477M13X26--R |
RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
|
Freescale Semiconductor, Inc
|
BLA1011-300 LA1011-300 |
Avionics LDMOS transistors Avionics LDMOS transistor BLA1011-300<SOT957A (LDMOST)|<<http://www.nxp.com/packages/SOT957A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
MHPA18010 |
MHPA18010 1805-1880 MHz, 10 W, 24.5 dB RF High Power LDMOS Amplifier CDMA BAND RF LINEAR LDMOS AMPLIFIER
|
MOTOROLA[Motorola, Inc]
|
BLF6G27LS-40P BLF6G27L-40P |
40 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Power LDMOS transistor
|
NXP Semiconductors N.V.
|
BLF6G22L-40BN |
40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Power LDMOS transistor
|
NXP Semiconductors N.V.
|